D1010UK Datasheet, PDF (2/5 Pages) Seme LAB – METAL GATE RF SILICON FET

D1010UK
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV_DSS
Drain–Source Breakdown
Voltage
PER SIDE
V_GS = 0
I_D = 100mA
70
I_DSS
Zero Gate Voltage
Drain Current
V_DS = 28V
V_GS = 0
I_GSS
V_GS(th)
g_fs
G_PS
h
VSWR
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
TOTAL D
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
V_GS = 20V
I_D = 10mA
V_DS = 10V
P_O = 125W
V_DS = 28V
f = 400MHz
V_DS = 0
V_DS = V_GS
I_D = 5A
I_DQ = 2A
1
3.2
10
50
20:1
C_iss
C_oss
C_rss
Input Capacitance
V_DS = 0
Output Capacitance
V_DS = 28V
Reverse Transfer Capacitance V_DS = 28V
PER SIDE
V_GS = –5V
V_GS = 0
V_GS = 0
f = 1MHz
f = 1MHz
f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
4
mA
1
mA
7
V
S
dB
%
—
240 pF
120 pF
10
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R_{THj–case}
Thermal Resistance Junction – Case
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Max. 0.5°C / W
Prelim. 01/01