 English |
|
|
|
|
|
|
|
| BUL74B Datasheet, PDF (2/2 Pages) Seme LAB – ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | |||
| |||
| ◁ |
SEME
LAB
BUL74B
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ELECTRICAL CHARACTERISTICS
VCEO(sus) Collector â Emitter Sustaining Voltage IC = 10mA
400
V(BR)CBO Collector â Base Breakdown Voltage IC = 1mA
800
V(BR)EBO Emitter â Base Breakdown Voltage IE = 1mA
10
ICBO
Collector â Base CutâOff Current
VCB = 800V
TC = 125°C
ICEO
Collector â Emitter CutâOff Current VCE = 390V
IEBO
Emitter CutâOff Current
VEB = 9V
TC = 125°C
IC = 0.1A
VCE = 1V
18
hFE*
DC Current Gain
IC = 5A
VCE = 1V
10
IC = 7A
VCE = 5V
11
IC = 10A
VCE = 5V
8
IC = 1A
IB = 0.1A
VCE(sat)* Collector â Emitter Saturation Voltage IC = 5A
IB = 0.5A
IC = 10A
IB = 2A
VBE(sat)* Base â Emitter Saturation Voltage
IC = 5A
IC = 10A
IB = 0.5A
IB = 2A
DYNAMIC CHARACTERISTICS
ft
Transition Frequency
IC = 0.2A
VCE = 4V
Cob
Output Capacitance
VCB = 10V f = 1MHz
* Pulse test tp = 300µs , δ < 2%
Typ.
16
90
Max. Unit
V
10
µA
100
10
µA
10
µA
100
50
30
â
30
20
0.1
0.5
V
0.8
1.2
V
1.5
MHz
pF
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/97
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese