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| BFY50 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN medium power transistors | |||
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BFY50
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
V(BR)CBO*
V(BR)CEO*
V(BR)EBO*
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE*
Parameter
Test Conditions
Collector â Base Breakdown Voltage IC = 100mA
Collector â Emitter Breakdown Voltage IC = 30mA
IE = 0
IB = 0
Emitter â Base Breakdown Voltage IC = 100mA IE = 100mA
Collector Cut-off Current
VCB = 60V
IE = 0
TC = 100°C
Emitter Cut-off Current
VEB = 5V
IC = 0
TC = 100°C
Collector â Emitter Saturation Voltage IC = 150mA
IC = 1A
IE = 15mA
IB = 0.1A
Base â Emitter Saturation Voltage
IC = 150mA
IC = 1A
IB = 15mA
IB = 0.1A
IC = 10mA VCE = 10V
DC Current Gain
IC = 150mA VCE = 10V
IC = 1mA
VCE = 10V
Min.
80
35
6
20
30
15
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
hfe
Small Signal Current Gain
VCE = 6V
VCE = 6V
IC = 1mA
IC = 10mA
f = 1kHz
f = 1KHz
hie
Imput Impedance
VCE = 5V IC = 10mA f = 1.KHz
hrE
Reverse Voltage Ratio
VCE = 5V IC = 10mA f = 1.KHz
hoe
Output Admittance
VCE = 5V IC = 10mA f = 1.KHz
Ccbo Collector -Base Capacitance VCB = 5V IE = 10mA f = 1.KHz
fT
Transistion Frequency
VCE = 10V IC = 50mA
60
td
Delay Time
IC = 150mA VCC = 10V
tr
Rise Time
IB1= 15mA VBE = -2V
ts
Storage Time
IC = 150mA VCC = 10V
tf
Fall Time
IB1= -IB2 = 15mA
Pulse Duration = 300ms, Duty Cycle = 1%
Typ. Max. Unit
V
0.14
0.7
0.95
1.5
40
55
30
50
nA
2.5
mA
50
nA
2.5
mA
0.2
V
1
1.3
V
2
â
Typ.
25
45
180
30
10
100
15
40
300
60
Max. Unit
â
W
55 x10.6 â
mS
pF
MHz
ns
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.02/00
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