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| BFX48 Datasheet, PDF (2/2 Pages) Seme LAB – PNP SILICON EPITAXIAL TRANSISTOR | |||
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BFX48
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated)
Parameter
ICES Collector Cutâoff Current
Collector â Base Breakdown
V(BR)CBO Voltage
Test Conditions
VBE = 0
VCE = -20V
Tamb = 125°C
IE = 0
IC = 10mA
Collectorâ Emitter Breakdown
V(BR)CEO* Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
Collector â Emitter Saturation
VCE(sat)* Voltage
Base â Emitter
VBE(sat)* Saturation Voltage
hFE* DC Current Gain
IC = â10mA
IE = â10mA
IC = â1mA
IC = â10mA
IC = â50mA
IC = â1mA
IC = â10mA
IC = â50mA
IC = â10mA
IC = â100mA
IC = â10mA
IC = â50mA
IC = â10mA
Tamb = -55°C
IB = 0
IC = 0
IB = -0.1mA
IB = -1mA
IB = -5mA
IB = -0.1mA
IB = -1mA
IB = -5mA
VCE = -1V
VCE = -1V
VCE = -1V
VCE = -1V
VCE = -1V
fT
Transistion Frequency
IC = â10mA
f = 100MHz
VCE = -20V
CEBO
Emitter â Base
Capacitance
IC = 0
f = 1MHz
VEB = -0.5V
Collector-Base
CCBO Capacitance
IE = 0
f = 1MHz
VCB = -10V
NF Noise Figure
IC = -1mA
f = 100MHz
VCE = -5V
Rg = 100W
ton
Turn-on time
IC = -50mA
IB1 = -5mA
toff
Turn-off time
IC = -50mA
IB1 = IB2 =-5mA
rbbâCbâc Feedback Time Constant
IC = -10mA
f = 80MHz
VCE = -20V
m *Pulsed: pulse duration = 300 s, duty cycle = 1%
THERMAL CHARACTERISTICS
Rqth(j-case) Thermal Resistance Junction - Case
Rqth(j-amb) Thermal Resistance Junction - Ambient
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Min.
-30
-30
-5
40
70
90
20
30
` 400
Typ.
Max. Unit
-15 nA
-15 mA
V
-0.1
-0.77
80
130
160
40
V
V
-0.13
-0.14 V
-0.3
-0.75
-0.9 V
-1.1
â
550
MHz
4
5.5
pF
2.2
3.5
3.5
6
dB
20
50 ns
95
160 ns
40 ps
175
°C/W
486
°C/W
Document. 2340
Issue 1
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