BFX34_10 Datasheet, PDF (2/3 Pages) Seme LAB – HIGH CURRENT GENERAL PURPOSE TRANSISTOR

HIGH CURRENT GENERAL
PURPOSE TRANSISTOR
BFX34
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
V(BR)CBO⁽¹⁾
V(BR)CEO ⁽¹⁾
VEBO⁽¹⁾
VCE(sat) ⁽¹⁾
VBE(sat) ⁽¹⁾
ICES
Parameters
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter - Base Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Cut-Off Current
Test Conditions
IC = 5mA
VBE = 0
IC = 10mA
IE = 1.0mA
IB = 0
IC = 0
IC = 5A
IB = 0.5A
VCE = 60V
VBE = 0
IEBO
Emitter Cut-Off Current
VEB = 4V
IC = 0
IC = 1.0A
VCE = 2V
hFE
DC Current Gain
IC = 1.5A
VCE = 0.6V
IC = 2A
VCE = 2V
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
Cobo
Cibo
ton
toff
Output Capacitance
Input Capacitance
Turn on Time
Turn off Time
IC = 0.5A
f = 20MHz
VCB = 10V
VEB = 0.5V
VCC = 20V
IB1= -IB2 = 50mA
VCE = 5V
f = 1.0MHz
f = 1.0MHz
IC = 0.5A
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Min. Typ. Max. Unit
120
60
6
V
0.4 1.0
1.3 1.6
0.02 10
µA
0.05 10
100
75
-
40
80 150
70 100
MHz
40 100
pF
300 500
0.6
µS
1.2
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Issue 2
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