BFT36A_02 Datasheet, PDF (2/2 Pages) Seme LAB – PNP SILICON TRANSISTOR

BFT36A
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Static Value of Common
h21E
Emitter Forward Current
Transfer Ratio
f_T
Transistion Frequency
V_CE = - 10V
V_CE = - 10V
V_CE = - 10V
V_CE = - 5V
f = 20MHz
I_C = - 0.15
50
I_C = - 2A
15
I_C = - 1mA
20
I_C = - 100mA
50
I_CBO
Collector Base
Cut- Off Current.
V_CB = - 80V
I_E = 0
t = 150°C
I_EBO
Emitter–Base Cut-off Current
h_21e
V_CE(sat)*
V_BE(sat)*
C_22b
Small Signal Common Emitter V_EB = - 4V
Forward Current Transfer Ratio V_CE = - 5V
Collector – Emitter
f = 1KHz
Saturation Voltage*
Base – Emitter
Saturation Voltage*
Common – Base
Output Capacitance
I_C = - 150mA
I_C = - 1A
I_C = - 150mA
V_CB = - 10V
f = 1MHz
25
I_C = - 10mA
I_B = - 15mA
I_B = - 0.1A
I_B = - 15mA
I_E = 0
Typ.
Max. Unit
250
—
MHz
- 100 nA
- 100 µA
- 100 nA
—
- 0.3
V
- 0.6
- 0.95
V
- 1.3
80
pF
*Pulse Conditions: Pulse Length = 300µs duty cycle = 1.5%
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Document Number 3082
Issue 1