BFT33A Datasheet, PDF (2/2 Pages) Seme LAB – NPN SILICON TRANSISTOR

BFT33A
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Static Value of Common
h21E
Emitter Forward Current
Transfer Ratio
f_T
Transistion Frequency
V_CE = 10V
V_CE = 10V
V_CE = 10V
V_CE = 5V
f = 20MHz
I_C = 0.15
50
I_C = 2A
15
I_C = 1mA
20
I_C = 100mA
50
I_CBO
Collector Base
Cut- Off Current.
V_CB = 80V
I_E = 0
t = 150°C
I_EBO
h_21e
Emitter–Base Cut-off Current V_EB = 4V
Small Signal Common Emitter V_CE = 5V
Forward Current Transfer Ratio f = 1KHz
I_C = 10mA
25
V_CE(sat)*
V_BE(sat)*
C_22b
Collector – Emitter
Saturation Voltage*
Base – Emitter
Saturation Voltage*
Common – Base
Output Capacitance
I_C = 150mA
I_C = 1A
I_C = 150mA
I_C = 1A
V_CB = 10V
f = 1MHz
I_B = 15mA
I_B = 0.1A
I_B = 15mA
I_B = 0.1A
I_E = 0
Typ.
Max. Unit
250
—
MHz
100 nA
100 µA
100 nA
—
0.3
V
0.6
0.95
V
1.3
80
pF
*Pulse Conditions: Pulse Length = 300µs duty cycle = 1.5%
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Document Number 3081
Issue 1