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| BFC46 Datasheet, PDF (2/2 Pages) Seme LAB – 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |||
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SEME
LAB
DYNAMIC CHARACTERISTICS
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge3
Qgs
Gate â Source Charge
Qgd
Gate â Drain (âMillerâ) Charge
td(on)
Turnâon Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8â¦
SOURCE â DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = â ID [Cont.]
trr
Reverse Recovery Time
IS = â ID [Cont.] , dls / dt = 100A/µs
Qrr
Reverse Recovery Charge
SAFE OPERATING AREA CHARACTERISTICS
Characteristic
Test Conditions
SOA1
Safe Operating Area
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
SOA2
Safe Operating Area
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.
ILM
Inductive Current Clamped
THERMAL CHARACTERISTICS
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MILâSTDâ750 Method 3471
BFC46
Min.
Typ.
790
116
44
38
4.5
16
10
11
35
13
Max. Unit
950
163 pF
66
55
7 nC
24
20
21
ns
53
26
Min.
160
1.5
Typ.
320
3.0
Max. Unit
5.5
A
22
1.3 V
640 ns
6.0 µC
Min. Typ. Max. Unit
180
W
180
W
22
A
Min.
Typ.
Max. Unit
0.68
°C/W
40
CAUTION â Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
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