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| BDY26A Datasheet, PDF (2/2 Pages) Seme LAB – HIGH CURRENT NPN SILICON TRANSISTOR | |||
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BDY26A
THERMAL CHARACTERISTICS
Rth j-case Thermal resistance to case
Max
3.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ICEO
Collector Cut-Off Current
VCE = 140V
IB = 0
ICES
Collector Cut-Off Current
VCE = 180V
VBE = 0
IEBO
Emitter Cut-Off Current
VEB = 10V
IC = 0
V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 50mA
IB = 0
180
V(BR)CBO* Collector-Base Breakdown Voltage
IC = 3mA
300
VCE(sat)* Collector-Emitter Saturation Voltage IC = 2.0A
IB = 0.25A
VBE(sat)* Base-Emitter Saturation Voltage
IC = 2.0A
IB = 0.25A
hFE*
Forward-current transfer ratio
IC = 1.0A
VCE = 4.0V
IC = 2.0A
VCE = 4.0V
15
Typ.
55
20
Max.
1.0
1.0
1.0
0.6
1.2
45
Unit
mA
V
DYNAMIC CHARACTERISTICS
Cobo
Output Capacitance
FT
Transition Frequency
Ton
Turn-on time
Toff
Turn-off time
* Pulse test tp = 300µs, δ < 2%
IE = 0
f = 1.0MHz
VCB = 10V
65 120 pF
IC = 0.5A
VCE = 15V
10
f = 10.0MHz
MHz
IC= 5.0A
IC= 5.0A
IB1= 1.0A
IB1=-IB2= 1.0A
1.0
µs
2
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7654, ISSUE 1
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