BDS13_07 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES

BDS13 BDS13SMD BDS13SMD05
BDS14 BDS14SMD BDS14SMD05
BDS15 BDS15SMD BDS15SMD05
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions Min. Typ.
I_CBO
I_CEO
I_EBO
V_CEO(sus)*
Collector cut-off current
(I_E = 0)
BDS13
BDS14
BDS15
V_CB = - 60V
V_CB = - 80V
V_CB = - 100V
Collector cut-off current
(I_B = 0)
BDS13
BDS14
BDS15
V_CE = - 30V
V_CE = - 40V
V_CE = - 50V
Emitter cut-off current
(I_C = 0)
V_EB = - 5V
BDS13
Collector - Emitter
BDS14
sustaining voltage (I_B = 0) _BDS15
I_C = - 100mA
- 60
- 80
- 100
V_CE(sat)*
V_BE(sat)*
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
I_C = - 5A I_B = - 0.5A
I_C = - 10A I_B = - 2.5A
I_C = - 10A I_B = - 2.5A
V_BE*
h_FE*
f_T
Base - Emitter voltage I_C = - 5A V_CE = - 4V
I_C = - 0.5A V_CE = - 4V
40
DC Current Gain
I_C = - 5A V_CE = - 4V
15
I_C = - 10A V_CE = - 4V
5
Transition frequency
I_C = - 0.5A V_CE = - 4V
3
f = 1MHz
*Pulsed : Pulse duration = 300 µs , duty cycle = 1.5%
Max.
- 500
- 500
- 500
- 1.0
- 1.0
- 1.0
Unit
µA
mA
- 1.0 mA
V
- 1.0
V
-3
- 2.5 V
- 1.5 V
300
150
MHz
SWITCHING CHARACTERISTICS
Parameter
Test Conditions
t_on
On Time
(t_d + t_r) I_C = - 4A V_CC = - 30V I_B1 = - 0.4A
t_s
Storage Time
I_C = - 4A V_CC = - 30V
t_r
Fall Time
I_B1 = –I_B2 = 0.4A
THERMAL CHARACTERISTICS
R_θJ-C
Test Conditions
Thermal Resistance Junction to Case
Max.
0.7
1.0
0.8
Max.
4.0
Unit
µs
µs
µs
Unit
°C/W
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Document Number 3255
Issue 3