English
Language : 

BDS13 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
◁
SEME
LAB
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
Parameter
Test Conditions
Collector cut-off current
(IE = 0)
BDS13
BDS14
BDS15
VCB = –60V
VCB = –80V
VCB = –100V
Collector cut-off current
(IB = 0)
BDS13
BDS14
BDS15
VCE = –30V
VCE = –40V
VCE = –50V
Emitter cut-off current
(IC = 0)
VEB = –5V
BDS13
Collector - Emitter
BDS14
sustaining voltage (IB = 0) BDS15
IC = –100mA
Min.
–60
–80
–100
Typ.
VCE(sat)*
VBE(sat)*
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
IC = –5A IB = –0.5A
IC = –10A IB = –2.5A
IC = –10A IB = –2.5A
VBE*
Base - Emitter voltage IC = –5A VCE = –4V
IC = –0.5A VCE = –4V
40
hFE*
DC Current gain
IC = –5A VCE = –4V
15
IC = –10A VCE = –4V
5
fT
Transition frequency
IC = –0.5A VCE = –4V
3
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
Max.
–500
–500
–500
–1
–1
–1
Unit
mA
mA
–1 mA
V
–1
V
–3
–2.5 V
–1.5 V
250
150
MHz
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts
Storage Time
tr
Fall Time
Test Conditions
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = –IB2 = 0.4A
Max.
0.7
1.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
RTHcase-sink Thermal resistance case - heatsink **
RTHj-a
Thermal resistance junction - ambient
** Smooth flat surface using thermal grease.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Max. 1.4°C/W
Typ. 1.0°C/W
Max. 80°C/W
PRELIM. 7/00