BCU86 Datasheet, PDF (2/6 Pages) Seme LAB – NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTOR

BCU86-SMD
BCU87-SMD
DYNAMICS CHARACTERISTICS (T_case = 25°C unless otherwise stated)
V_(BR)CEO
V_(BR)CBO
Parameter
Collector – Emitter Base
Breakdown Voltage
Collector – Base
Breakdown Voltage
V_(BR)EBO Emitter Base Breakdown Voltage
ICBO
Collector Cut–Off Current
IEBO
Emitter Cut–Off Current
hFE1*
DC Current Gain
hFE2*
DC Current Gain
fT
Transition frequency
Cob
Output Capacitance
ton Turn – On Time
tstg Storage Time
tf
Fall Time
Test Conditions
IC = 1mA
RBE = 0
IC = 10mA
IE = 0
IC = 0
IE = 10mA
VCB = 40V
IE = 0
VBE = 4V
IC = 0
VCE = 2V
IC = 100mA
VCE = 2V
IC = 3A
VCE = 10V
IC = 50mA
VCB = 10V
f = 1MHz
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
BCU86
See specified test circuit
BCU86
See specified test circuit
BCU86
See specified test circuit
BCU86
Min.
50
Typ.
60
6
100*
35
150
25
70
650
35
* Pulse test t_p = 300ms , d £ 2%
Reverse Polarity for PNP
* The BCU86 / BCU87 are classified by 100mA h_FE as follows:
100 R 200 140 S 280
200 T 400
280 U 560
Max. Unit.
V
V
V
1
mA
1
mA
560* —
—
MHz
pF
ns
Magnatec. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim.9/98