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| BCU81 Datasheet, PDF (2/4 Pages) Seme LAB – NPN EPITAXIAL PLANAR SILICON TRANSISTOR | |||
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BCU81
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
V(BR)CEO
V(BR)CEX
V(BR)CBO
V(BR)EBO
ICBO
IEBO
VCE(sat)*
hFE*
fT
Cob
Parameter
Collector â Emitter
Breakdown Voltage
Collector â Emitter Voltage
Collector â Base
Breakdown Voltage
Emitter â Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector â Emitter Saturation
Voltage
DC Current Gain
Transition frequency
Output Capacitance
* Pulse test tp = 300ms , d £ 2%
Test Conditions
IC = 1mA
IC = 1mA
IC = 10mA
IC = 0
VCB = 20V
IC = 0
IC = 3A
VCE = 2V
VCE = 10V
VCB = 10V
RBE = ¥
VBE = â3V
IE = 0
IE = 10mA
IE = 0
VBE = 4V
IB = 60mA
IC = 3A
IC = 50mA
f = 1MHz
Min.
10
20
30
6
Typ.
0.3
140
210
200
30
Max. Unit.
V
V
V
V
1
mA
1
mA
0.4 V
â
MHz
pF
Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843.
E-mail: magnatec@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.6/99
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