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| BC109DCSM Datasheet, PDF (2/3 Pages) Seme LAB – SILICON EPITAXIAL NPN TRANSISTOR | |||
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SILICON EPITAXIAL
NPN TRANSISTOR
BC109DCSM
ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
Min.
ICBO
Collector-Cut-Off Current
VCB = 20V
TA = 150°C
V(BR)CBO
Collector-Base Breakdown
Voltage
IC = 10µA
30
V(BR)CEO(2)
Collector-Emitter
Breakdown Voltage
IC = 10mA
20
V(BR)EBO
Emitter-Base Breakdown
Voltage
IE = 10µA
5
VBE(2)
Base-Emitter Voltage
IC = 2mA
IC = 10mA
VCE = 5V
VCE = 5V
550
VCE(sat)(2)
Collector-Emitter Saturation
Voltage
IC = 10mA
IC = 100mA
IB = 0.5mA
IB = 5mA
VBE(sat)(2)
Base-Emitter Saturation
Voltage
IC = 10mA
IC = 100mA
IB = 0.5mA
IB = 5mA
hFE(2)
Forward-current transfer
IC = 2mA
VCE = 5V
200
ratio
IC = 10µA
VCE = 5V
40
Typ
750
900
Max.
15
15
Units
nA
µA
V
700
700
250
mV
600
800
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
hfe
Small-Signal Current Gain
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 10mA
f = 100MHz
IC = 2mA
f = 1.0KHz
VCB = 10V
f = 1.0MHz
VEB = 0.5V
f = 1.0MHz
Notes
(2) Pulse Width ⤠300us, δ ⤠2%
VCE = 5V
VCE = 5V
IE = 0
IC = 0
150
MHz
240
900
6
pF
12
pF
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8124
Website: http://www.semelab-tt.com
Issue 1
Page 2 of 3
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