 English |
|
|
|
|
|
|
|
| 2N6385SMD05 Datasheet, PDF (2/2 Pages) Seme LAB – SILICON POWER NPN | |||
| |||
| ◁ |
2N6385SMD05
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
OFF CHARACTERISTICS
Collector â Emitter Breakdown
VCEO(BR)* Voltage
IC = 200mA IB = 0
80
ICEO
Collector Cutâoff Current
ICEV
Collector Cutâoff Current
IEBO
VCER(BR)
Emitter Cutâoff Current
CollectorâEmitter Breakdown
Voltage*
VCE = 80V
IB = 0
VCE = VCEO(BR) VBE(off) = 1.5V
TC = 150°C
VEB = 5V
IC = 0
REB =100Ω
IC = 200mA
VCEV(BR)
CollectorâEmitter Breakdown
Voltage*
ON CHARACTERISTICS
VBE(off) = 1.5V IC = 200mA
hFE
VCE(sat)
VBE(on)
VF
DC Current Gain
Collector â Emitter
Saturation Voltage
Base â Emitter On Voltage
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
VCE = 3V
VCE = 3V
IC = 5A
IC = 10A
VCE = 3V
VCE = 3V
IF = 10A
IC = 5A
IC = 10A
IB = 0.01A
IB = 0.1A
IC = 5A
IC = 10A
1000
100
Cob
Output Capacitance
VCB =10V
IE = 0
ftest= 1.0MHz
lhfel
*Magnitude of Common Emitter
Small Signal Short-Circuit
VCE = 5V
IC = 1.0A
f = 1.0KHz
20
hfe
Common Emitter Small Signal
Short-Circuit Forward
VCE = 5V
IC = 1.0A
f = 1.0KHz
SECOND BREAKDOWN
1000
Es/b
L =12mH
Energy with Base-Reverse Biased
RBE = 100Ω
VBE(off) = 1.5V IC = 4.5A
120
* Pulse test tp = 300μs , Duty Cycle ⤠2%
Typ. Max. Unit
V
1.0 mA
0.3
mA
3.0
10 mA
80
V
80
20000
â
2.0
V
3.0
2.8
V
4.5
4.0 V
200 pF
â
â
mJ
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6387
Issue 1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese