2N6190 Datasheet, PDF (2/2 Pages) Seme LAB – PNP SILICON TRANSISTORS

2N6190
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
V_(BR)CEO*
I_CBO
I_CEX
I_CEO
I_EBO
V_CE(sat)*
V_BE(sat)*
h_FE*
fT
C_IBO
C_OBO
td
tr
ts
tf
Parameter
Collector Emitter Breakdown Voltage
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Collector-Emitter Cut Off Current
Collector-Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transition Frequency
Input Capacitance, Output Open
Circuited
Open Circuit Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
I_C = 50mA
I_E = 0
V_BE = 1.5V
I_B = 0
V_BE = 6V
I_C = 2A
I_C = 5A
I_C = 2A
I_C = 5A
I_C = 0.5A
I_C = 2A
I_C = 5A
V_CE = 10V
f = 10MHz
V_CB = 80V
V_CE = 75V
TA = 150°C
V_CE = 75V
I_B = 0.2A
I_B = 0.5A
I_B = 0.2A
I_B = 0.5A
V_CE = 2V
V_CE = 2V
V_CE = 2V
I_C = 0.5A
V_BE = 2V
f =100kHz
I_C = 0
V_CB = 10V I_E = 0
f =100kHz
V_CC = 40V I_E = 2.0A
V_BE(off) = 3.0 I_B1 = 0.2A
V_CC = 40V I_E = 2.0A
I_B1 = I_B2 = 0.2A
* Pulse Test: t_p = 300µs , δ = 1%.
Min.
80
30
30
20
30
Typ.
Max.
10
10
1.0
100
100
0.7
1.2
1.2
1.8
Unit
V
µA
µA
mA
µA
µA
V
V
120 —
MHz
1250
pF
300
100
ns
100
20
µs
200 ns
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Document Number 5912
Issue: 1