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2N5428A Datasheet, PDF (2/2 Pages) Seme LAB – MEDIUM POWER NPN SILICON
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2N5428A
OFF CHARACTERISTICS
Parameter
BVCEO (sus) Collector - Emitter
sustaining voltage
ICBO
Collector cutoff current
ICEX
Collector cutoff current
ICBO
IEBO
Collector cutoff current
Emitter cutoff current
Test Conditions
IC = 50mA , IB = 0
VCE = 75V , IB = 0
VCE = 75V , VEB(off) = 1.5V
VCE = 75V , VEB(off) = 1.5V , TC = 150°C
VCB = Rated VCB ' IE = 0
VBE = 6V, IC = 0
Min
80
-
-
-
Max
-
100
10
1.0
10
100
Unit
V
mA
mA
mA
mA
mA
ON CHARACTERISTICS
Parameter
hFE
DC Current gain (1)
VCE(sat)
VBE(sat)
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
Test Conditions
IC = 500mA , VCE = 2V
IC = 2A , VCE = 2V
IC = 5A , VCE = 2V
IC = 2A , IB = 0.2A
IC = 7A , IB = 0.7A
IC = 2A , IB = 0.2A
IC = 7A , IB = 0.7A
Min Max Unit
60
-
30
120
—
30
0.7
V
1.2
1.2
V
2.0
DYNAMIC CHARACTERISTICS
Parameter
Current gain
fT
bandwidth product
Cob
Output capacitance
Cib
Input capacitance
Test Conditions
(IC = 500 mA, VCE = 10V, f = 10 MHz)
(VCB = 10V, IE = 0, f = 100 kHz)
(VBE = 2V, IC = 0, f = 100 kHz)
Min Max Unit
30
-
MHz
-
250
pF
-
1000 pF
SWITCHING CHARACTERISTICS
Parameter
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
Test Conditions
(VCC = 40V, VEB(off) = 3V
IC = 2A, IB1 = 200mA)
(VCC = 40V, IC = 2A
IB1 = IB2 = 200mA)
(1) Pulse Test: Pulse width = 300 ms, Duty Cycle = 2.0 %
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Min Max Unit
-
100
ns
-
100
ns
-
2.0
ms
-
200
ns
Prelim. 7/93