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2N5338X Datasheet, PDF (2/2 Pages) Seme LAB – NPN SILICON TRANSISTORS
◁
SEME
LAB
2N5338X
2N5339X
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
29.2
°C/W
Max
175
°C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ICBO
Collector Cut Off Current
IE = 0
VCB = 100V
ICEX
Collector Cut Off Current
VBE = 1.5V VCE = 90V
Tcase = 150°C
ICEO
Collector Cut Off Current
IB = 0
VCE = 90V
VCEO(sus)* Collector Emitter Sustaining Voltage IB = 0
IC = 50mA
VCE(sat)*
Collector Emitter Saturation Voltage
IC = 2A
IC = 5A
IB = 0.2A
IB = 0.5A
VBE(sat)* Base Emitter Voltage
IC = 2A
IC = 5A
IB = 0.2A
IB = 0.5A
IC = 0.5A VCE = 2V
60
hFE*
DC Current Gain
IC = 2A
VCE = 2V
60
IC = 5A
VCE = 2V
40
fT
Transistion Frequency
IC =0.5mA VCE = 10V
30
CCBO
Collector Base Capacitance
IE = 0
VCB = 10V
f = 0.1MHz
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC = 2A
VCC = 40V
IB1 = 0.2mA
IC = 2A
VCC = 40V
IB1 = - IB2 = 0.2A
* Pulse test tp = 300ms , Duty Cycle 1.5%
Typ.
Max.
10
10
1
100
100
0.7
1.2
1.2
1.8
Unit
µA
µA
mA
µA
V
V
V
240 —
MHz
250 pF
200 ns
2.5 ms
200 ns
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Prelim. 11/99