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| 2N5337A-220M Datasheet, PDF (2/2 Pages) Seme LAB – SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE | |||
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2N5337A-220M
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
VCE(sat)*
VBE(sat)*
Parameter
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector - Emitter
Sustaining voltage
Collector - Emitter
Saturation voltage
Base - Emitter
Saturation voltage
hFE*
DC Current gain
fT
Transition frequency
Test Conditions
IE = 0
IB = 0
VEB = 6V
VCB = 80V
VCE = 75V
IB = 0
IC =50mA
IC = 5A
IC = 2A
IB = 0.5A
IB = 0.2A
IC = 2A
IB = 0.2A
IC = 0.5A
IC = 2A
IC = 5A
IC = 0.5A
VCE = 2V
VCE = 2V
VCE = 2V
VCE = 10V
Min.
80
60
60
40
10
Typ.
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
Max.
10
100
100
Unit
mA
1.2
0.7
1.2 V
240
MHz
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts
Storage Time
tr
Fall Time
Test Conditions
IC = 2A VCC = 10V IB1 = 0.2A
IC = 2A VCC = 10V
IB1 = âIB2 = 0.2A
Max.
0.7
2.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
** Smooth flat surface using thermal grease.
Max. 17.5°C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.8/00
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