2N5096 Datasheet, PDF (2/2 Pages) Seme LAB – HIGH VOLTAGE PNP TRANSISTOR

2N5096
ELECTRICAL CHARACTERISTICS (T_case = 25°C unless otherwise stated)
BV_CEO*
BV_CER*
BV_CBO
BV_EBO
I_CBO
I_EBO
h_FE*
Parameter
Collector Emitter Breakdown Voltage
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
V_{CE(SAT)* Collector Emitter Saturation Voltage}
V_{BE(SAT)* Base Emitter Saturation Voltage}
f_T
Current Gain Bandwidth Product
Test Conditions
I_C=50mA
I_C=100µA
I_C=100µA
I_E=20µA
V_CB=500V
V_EB=4V
I_C=1mA
I_C=25mA
I_C=100mA
I_C=25mA
I_C=25mA
I_C=10mA
RBE = 1K
V_CE=10V
V_CE=10V
V_CE=15V
I_B=2.5mA
I_B=2.5mA
V_CE =20V
f=5MHz
Min.
450
500
500
6
Typ.
20
40
20
20
SWITCHING TIMES (T_case = 25°C unless otherwise stated)
Parameter
Test Conditions
t_d
Delay Time
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
V_CC=150V
I_C=100mA
I_B1=I_B2=10mA
Min. Typ.
Max. Unit
V
500
nA
250
200
250
200
3.0
V
1.0
MHz
Max.
700
1500
3
200
Unit
ns
µS
ns
* Pulsed: Pulse Duration = 300µs, duty cycle = 1.5%
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Document Number 4058
Issue 1