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2N5038 Datasheet, PDF (2/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(20A,140W)
2N5038
THERMAL CHARACTERISTICS
Rth j-case Thermal resistance to case
Max.
1.25
Unit
°C/W
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
Min.
hFE*
Forward-current transfer ratio
IC = 2A
IC = 12A
50
VCE = 5.0V
20
VCE(sat)*
Collector to Emitter Saturation
Voltage
IC = 12A
IC = 20A
IB = 1.2A
IB = 5A
VBE(sat)* Base to Emitter Saturated Voltage
IC = 20A
IB = 5A
V(BR)CEO*
Collector to Emitter Breakdown
Voltage
IC = 0.2A
90
V(BR)CEX*
Collector to Emitter Breakdown
Voltage
IC = 0.2A
RBE = 100Ω
150
VBE = -1.5V
VCE = 140V
VBE = -1.5V
ICEV
Collector Cut-Off Current
VCE = 100V
VBE = -1.5V
TCase = 150°C
ICEO
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
VCE = 70V
VEB = 7V
VEB = 5V
IB = 0
IC = 0
VBE*
Base-Emitter Voltage
VCE = 5.0V
IC = 12A
Typ.
Max.
250
100
1.0
2.5
3.3
50
10
20
50
5
1.8
Unit
V
mA
V
DYNAMIC CHARACTERISTICS
tr
Rise Time
VCC = 30V
IC=12A
ts
Storage Time
tf
Fall Time
IB1=-IB2=1.2A
Cob
Output Capacitance
IE = 0
f = 1.0MHz
VCB = 10V
|hfe|
Small Signal Current Gain
IC = 2A
VCE = 10V
12
f = 5MHz
* Pulse test tp = 300µs, δ < 2%
0.5
1.5
µs
0.5
500 pF
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both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
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DOC 7365, ISSUE 1