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| 2N5015_08 Datasheet, PDF (2/2 Pages) Seme LAB – HIGH VOLTAGE SILICON EPITAXIAL NPN TRANSISTOR | |||
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2N5015
2N5015S
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction - Case
RθJA Thermal Resistance Junction - Ambient
Max
50
°C/W
Max
175
°C/W
ELECTRICAL CHARACTERISTICS (Tcase=25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V(BR)CER*
Collector - Emitter Breakdown
Voltage
IC = 100µA
RBE = 1.0Kâ¦
1000
V(BR)CBO* Collector - Base Breakdown Voltage IC = 200µA
1000
V(BR)EBO* Emitter - Base Breakdown Voltage
IC = 0
IE = 50µA
5.0
ICBO* Collector - Base Cut-Off Current
VCB = 760V
-
TCASE = 100°C
-
IEBO* Emitter - Base Cut-Off Current
VEB = 4V
-
V * CE(sat) Collector - Emitter Saturation Voltage IC = 20mA
IB = 5.0mA
-
V * BE(sat) Base - Emitter Saturation Voltage
IC = 20mA
IB = 5.0mA
-
IC = 5mA
VCE = 10V
10
hFE* DC Current Gain
IC = 20mA
VCE = 10V
30
TCASE = -55°C
10
Typ.
-
-
-
-
10
-
-
-
-
-
-
Max.
-
-
-
12
100
20
1.8
1.0
-
180
-
Unit
V
µA
V
V
DYNAMIC CHARACTERISTICS (Tcase=25°C unless otherwise stated)
fT
Transition Frequency
IC = 20mA
f = 10MHz
VCE = 10V
10
-
- MHz
COBO Open Circuit Output Capacitance
IE = 0
f = 1.0MHz
VCB = 10V
-
-
30
pF
* Pulse test tp = 300µs, δ < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DOC 7992 issue 1
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