2N4910X_03 Datasheet, PDF (2/2 Pages) Seme LAB – NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE

2N4910X
2N4911X
2N4912X
Electrical Characteristics (T_C = 25°C unless otherwise stated.)
Parameter
Test Conditions
I_CEO
Collector – Emitter Cut-off Current V_CE = 40V
I_B = 0
I_CEX
Collector – Emitter Cut-off Current ^{VCE = V(BR)CEO}
V_BE = 1.5V
T_C = 150°C
I_CBO
Collector – Base Cut-off Current V_CB = V_(BR)CBO
I_E = 0
I_CES
Collector – Emitter Leakage
Current
V_CE = V_(BR)CEO
V_BE = 0
V_CE(sat)*
Collector – Emitter Saturation
Voltage
I_C = 1A
I_B = 0.1A
V_BE(sat)*
V_BE*
h_FE*
Base – Emitter Saturation Voltage
Base – Emitter Voltage
DC Current Gain
I_C = 1A
I_C = 1A
V_CE = 1V
V_CE = 1V
V_CE = 1V
I_B = 0.1A
V_CE = 1V
I_C = 50mA
I_C = 500mA
I_C = 1A
Min.
Typ.
Max.
0.50
100
1.0
0.1
Units
mA
µA
mA
mA
100 µA
0.60 V
1.3V V
1.3V V
40
20
175 —
10
* Pulse Test: t_p = 300µs, δ = 2%.
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 3933
Issue 1