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| 2N4910X Datasheet, PDF (2/2 Pages) Seme LAB – NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE | |||
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2N4910X
2N4911X
2N4912X
Electrical Characteristics (TC = 25°C unless otherwise stated.)
Parameter
Test Conditions
ICEO
Collector â Emitter Cut-off Current VCE = 30V
IB = 0
ICEX
Collector â Emitter Cut-off Current VCE = V(BR)CEO
VBE = 1.5V
TC = 150°C
ICBO
Collector â Base Cut-off Current VCB = V(BR)CBO
IE = 0
ICES
Collector â Emitter Leakage
Current
VCE = V(BR)CEO
VBE = 0
VCE(sat)*
Collector â Emitter Saturation
Voltage
IC = 1A
IB = 0.1A
VBE(sat)*
VBE*
hFE*
Base â Emitter Saturation Voltage
Base â Emitter Voltage
DC Current Gain
IC = 1A
IC = 1A
VCE = 1V
VCE = 1V
VCE = 1V
IB = 0.1A
VCE = 1V
IC = .5mA
IC = 1mA
IC = .05A
Min.
Typ.
Max. Units
0.50 mA
100 mA
1.0 mA
0.1 mA
100 mA
0.60 V
1.3V V
1.3V V
20
175
10
â
40
* Pulse Test: tp = 300ms, d = 2%.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 4/98
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