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2N4898X Datasheet, PDF (2/2 Pages) Seme LAB – PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR
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2N4898X
2N4899X
2N4900X
Electrical Characteristics (TC = 25°C unless otherwise stated.)
Parameter
Test Conditions
ICEO
Collector – Emitter Cut-off Current VCE = –30V
IB = 0
ICEX
Collector – Emitter Cut-off Current VCE = V(BR)CEO
VBE = –1.5V
TC = 150°C
ICBO
Collector – Base Cut-off Current VCB = V(BR)CBO
IE = 0
ICES
Collector – Emitter Leakage
Current
VCE = V(BR)CEO
VBE = 0
VCE(sat)*
Collector – Emitter Saturation
Voltage
IC = –1A
IB = –0.1A
VBE(sat)*
VBE*
hFE*
ft
Base – Emitter Saturation Voltage
Base – Emitter Voltage
DC Current Gain
Transition Frequency
IC = –1A
IC = –1A
VCE = –1V
VCE = –1V
VCE = –1V
VCE = –10V
f = 1 MHz
IB = –0.1A
VCE = –1V
IC = –50mA
IC = –500mA
IC = –1A
IC = –250mA
* Pulse Test: tp = 300µs, δ = 2%.
Min.
Typ.
Max.
0.50
100
1.0
0.1
Units
mA
µA
mA
mA
100 µA
–0.60 V
–1.3V V
–1.3V V
40
20
130 —
10
3.0
MHz
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