2N4416DCSM Datasheet, PDF (2/2 Pages) Seme LAB – SMALL SIGNAL DUAL N–CHANNEL J–FET IN A

SEME
LAB
2N4416DCSM
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC CHARACTERISTICS
V_(BR)GSS Gate – Source Breakdown Voltage V_DS = 0V
I_G = –1µA
–30
V_GSS(off) Gate – Source Cut–off Voltage
V_DS = 15V I_D = 1nA
I_DSS*
Saturation Current
V_DS = 15V V_GS = 0V
5
I_GSS
Gate Reverse Current
V_GS = –15V
V_DS = 0V
T_amb = 125°C
I_D(off)
Drain Cut–off Current
V_DG = 10V
V_DS = 10V
V_GS = –10V
V_GS = –6V
V_DS(on) Drain – Source On Voltage
V_GS = 0V
I_D = 3mA
R_DS(on) Drain – Source On Resistance
V_GS = 0V
I_D = 1mA
DYNAMIC CHARACTERISTICS
R_DS(on) Drain – Source On Resistance
V_GS = 0V
f = 1kHz
I_D = 0mA
C_ISS
Common – Source Input Capacitance ^{VDS = 15V}
f = 1KHz
V_GS = 0V
C_RSS
Common – Source Reverse Transfer V_DS = 15V
Capacitance
f = 1MHz
V_GS =0V
V_DG = 10V V_GS =0V
en
Equivalent Input Noise Voltage
f = 1kHz
* Pulse Test: PW ≤ 300 µs Duty Cycle ≤ 30%
Typ.
–35
–3
10
–0.6
2
0.25
150
150
2.2
0.7
6
Max. Unit
V
–6
15 mA
–1
nA
–200
100
pA
0.4
nA
Ω
Ω
pF
pF
nV
√Hz
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 3292
Issue 1