2N4416AC1 Datasheet, PDF (2/4 Pages) Seme LAB – SILICON SMALL SIGNAL N-CHANNEL JFET

SILICON SMALL SIGNAL
N-CHANNEL JFET
2N4416AC1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)GSS
VGS(off)
VGS
IDSS⁽¹⁾
IGSS
Gate – Source
Breakdown Voltage
Gate – Source
Cut-off Voltage
Gate – Source Voltage
Saturation
Drain Current
Gate Reverse Current
VDS = 0
VDS = 15V
VDS = 15V
VDS = 15V
VDS = 0
IG = -1.0µA
ID = 1.0nA
ID = 0.5mA
VGS = 0
VGS = -20V
TA = 150°C
IG
Gate Operating Current
VDG = 10V
ID = 1.0mA
ID(off)
VGS(F)
RDS(on)
Drain Cut-off Current
Gate – Source
Forward Voltage
Drain – Source
On Resistance
VDS = 10V
VDS = 0
VGS = 0
VGS = -10V
IG = 1.0mA
ID = 1.0mA
DYNAMIC CHARACTERISTICS
gfs⁽¹⁾
gos⁽¹⁾
Ciss
Coss
Crss
biss⁽²⁾
giss⁽²⁾
boss⁽²⁾
goss⁽²⁾
Gpe⁽²⁾
NF⁽²⁾
Common – Source
Forward Transconductance
Common – Source
Output Transconductance
Common – Source
Input Capacitance
Common – Source
Output Capacitance
Common – Source Reverse
Transfer Capacitance
Common – Source
Input Susceptance
Common – Source
Input Conductance
Common – Source
Output Susceptance
Common – Source
Output Conductance
Common – Source Insertion
Power Gain
Noise Figure
VDS = 15V
f = 1.0KHz
VDS = 15V
f = 1.0MHz
VDS = 15V
f = 100MHz
VDS = 15V
f = 100MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) By design only, not a production test.
VGS = 0
VGS = 0
VGS = 0
ID = 5mA
RG = 1.0KΩ
Min. Typ Max. Units
-35
-2.5
-6
V
-1.0
-5.5
5
15
mA
-100
pA
-100
nA
-20
pA
2
1.0
V
150
Ω
4.5
7.5
mS
50
µS
4
2
pF
1.2
2.5
0.3
mS
1.0
75
µS
18
dB
2
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