2N4393CSM_05 Datasheet, PDF (2/2 Pages) Seme LAB – SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

2N4393CSM
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
STATIC CHARACTERISTICS
V_(BR)GSS
V_GSS(off)
I_DSS*
Gate – Source Breakdown Voltage
Gate – Source Cut–off Voltage
Saturation Current
I_GSS
Gate Reverse Current
I_D(off)
Drain Cut–off Current
V_DS(on)
R_DS(on)
Drain – Source On Voltage
Drain – Source On Resistance
DYNAMIC CHARACTERISTICS
V_DS = 0V
V_DS = 20V
V_DS = 20V
V_GS = –20V
V_DS = 0V
V_DS = 20V
V_DS = 10V
V_GS = 0V
V_GS = 0V
I_G = –1μA
I_D = 1nA
V_GS = 0V
T_amb = 125°C
V_GS = –5V
V_GS = –5V
T_amb = 125°C
I_D = 3mA
I_D = 1mA
–35
–0.5
5
R_DS(on) Drain – Source On Resistance
V_GS = 0V
f = 1kHz
I_D = 0mA
C_ISS
Common – Source Input Capacitance ^{VDS = 20V}
f = 1MHz
V_GS = 0V
C_RSS
Common – Source Reverse Transfer V_DS = 0V
Capacitance
f = 1MHz
V_GS = –5V
_
e_n
Equivalent Input Noise Voltage
V_DG = 10V
f = 1kHz
I_D = 10mA
t_r
t_d(on)
t_f
t_d(off)
Rise Time
Turn-on Time
Fall Time
Turn-off Time
V_DD = 10V
V_GS = 0V
I_D = 3mA
V_GS(off) = 5V
Typ.
–55
–5
–3
5
3
0.25
13
4
3.0
Max. Unit
V
–3
30 mA
–100 pA
–200 nA
100 pA
200 nA
0.4
V
100
Ω
100
Ω
16
pF
5
pF
nV
√Hz
5
15
nS
30
50
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to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
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Document Number 6493
Issue 1