2N4392CSM_03 Datasheet, PDF (2/2 Pages) Seme LAB – SMALL SIGNAL N–CHANNEL J–FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

SEME
LAB
2N4392CSM
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V_(BR)GSS Gate – Source Breakdown Voltage V_DS = 0
I_G = 1µA
40
V_GS
Gate – Source Voltage
V_DS = 20V I_D = 1nA
–2
V_GS(f)
Gate – Source Forward Voltage
V_DS = 0
I_G = 1mA
I_GSS
Gate Reverse Current
V_DS = 0
V_GS = 20V
I_D(off)
Drain Cut–off Current
V_DS = 20V V_GS = –7V
I_DSS*
Zero Gate Voltage Drain Current
V_DS = 20V V_GS = 0
25
V_DS(on) Drain – Source On Voltage
V_GS = 0
I_D = 6mA
R_DS(on) Drain – Source On Resistance
V_GS = 0
I_D = 1mA
C_ISS
Input Capacitance
V_DS = 20V
f = 1MHz
V_GS = 0
C_RSS
Reverse Transfer Capacitance
V_DS = 0
f = 1MHz
V_GS = –7V
R_DS(on)
t_r
t_f
t_on
t_off
Static Drain – Source On Resistance
Rise Time
Fall Time
Turn-On Time
Turn-Off Time
V_GS = 0
I_D(on) = 6mA
V_GS(off) = 7V
I_D(on) = 6mA
V_GS(off) = 7V
I_D = 1mA
Typ.
Max. Unit
–5
V
1
0.1
nA
0.1
75 mA
0.4
V
60
Ω
14
pF
3.5
60
Ω
5
20
ns
15
35
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Document Number 3872
Issue 1