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| 2N4272 Datasheet, PDF (2/2 Pages) Seme LAB – BIPOLAR NPN SILICON TRANSISTOR | |||
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2N4272
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V(BR)CBO Collector â Base Breakdown Voltage IC = 100μA IE = 0
180
V(BR)CEO Collector â Emitter Breakdown Voltage IC = 10mA IB = 0
140
V(BR)EBO Emitter â Base Breakdown Voltage
IE = 100μA IC = 0
6
ICBO
Collector â Base Cut-off Current
VCB = 175V IE = 0
ICEO
Collector â Emitter Cut-off Current
VCE = 10V IB = 0
VCE(sat) Collector â Emitter Saturation Voltage IC = 500mA IB = 50mA
VBE
Base â Emitter Voltage
IC = 1A
VCE = 10V
hFE
Static Forward Current Transfer Ratio IC = 1A
VCE = 10V
20
Typ.
Max. Unit
V
100 μA
10 mA
0.6
V
1.1
140 â
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5630
Issue 1
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