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2N4240 Datasheet, PDF (2/2 Pages) Seme LAB – NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE
2N4240
ELECTRICAL CHARACTERISTICS (Tcase = 25°C , unless otherwise stated)
OFF CHARACTERISTICS
Parameter
Test Conditions
VCEO(sus)
ICEO
ICEX
IEBO
Collector – Emitter
Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC = 200mA , IB = 0
VCE = 150V , IB = 0
VCE = 450V , VBE(off) = 1.5V
VCE = 450V , VBE(off) = 1.5V , TC =150°C
VBE = 6V , IC = 0
ON CHARACTERISTICS (1)
Parameter
Test Conditions
hFE
VCE(sat)
VBE(sat)
VBE(on)
Is/b
Current Gain
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Base – Emitter
On Voltage
Second Breakdown
Collector Current
IC = 0.1A , VCE = 10V
IC = 0.75A , VCE = 2V
IC = 0.75A , VCE = 10V
IC = 0.75A , IB = 75mA
IC = 0.75A , IB = 75mA
IC = 0.1A , VCE = 10V
(VCC = 100V)
Min.
300
Min.
40
10
30
350
Typ.
Typ.
DYNAMIC CHARACTERISTICS
Parameter
Test Conditions
fT
Current Gain –
IC = 200mA , VCE = 10V
Bandwidth Product (2) ftest = 5.0MHz
Cob
Output Capacitance
VCB = 10V , IE = 0 , f = 1.0MHz
Min.
15
SWITCHING CHARACTERISTICS
Parameter
tr
Rise Time
ts
Storage Time
tf
Fall Time
Test Conditions
VCC = 200V , IC = 0.75A
RL = 200W , IB1 = 100mA
VCC = 200V , IC = 0.75A
IB1 = IB2 = 75mA
VCC = 200V , IC = 0.75A
IB1 = IB2 = 75mA
Min.
NOTES:
(1) Pulse Test: Pulse Width = 300 ms , Duty Cycle £ 2%
(2) fT = |hfe| • ftest
FIGURE 1 – SWITCHING TIME TEST CIRCUIT
Typ.
Typ.
Max.
5.0
2.0
5.0
0.5
Max.
100
150
1.0
1.8
1.4
Max.
120
Max.
0.5
6.0
3.0
Unit.
V
mA
mA
mA
Unit.
—
V
V
V
mA
Unit.
MHz
pF
Unit.
mS
mS
mS
RB AND RC varied to obtain desired current levels.
D1 must be fast recovery type.
For td and tr , D1 is disconnected and V2 = 0.
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Prelim. 8/93