2N4238 Datasheet, PDF (2/3 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN TRANSISTOR

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4238
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO⁽¹⁾
Collector-Emitter
Breakdown Voltage
IC = 10mA
VCE = 80V
IB = 0
VBE = -1.5V
ICEX
Collector Cut-Off Current
VCE = 50V
VBE = -1.5V
TA = 150°C
ICBO
Collector Cut-Off Current
VCB = 80V
IE = 0
IEBO
Emitter Cut-Off Current
VEB = 6V
IC = 0
IC = 100mA
VCE = 1.0V
hFE⁽¹⁾
Forward-current transfer
ratio
IC = 250mA
VCE = 1.0V
TA = -55°C
IC = 500mA
VCE = 1.0V
VCE(sat)⁽¹⁾
Collector-Emitter Saturation
Voltage
IC = 500mA
IC = 1.0A
IB = 50mA
IB = 0.1A
VBE(sat)⁽¹⁾
Base-Emitter Saturation
Voltage
IC = 500mA
IC = 1.0A
IB = 50mA
IB = 0.1A
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
Cobo
Output Capacitance
IC = 100mA
f = 10MHz
VCB = 10V
f = 1.0MHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
VCE = 10V
IE = 0
Min. Typ Max. Units
60
V
100
nA
25
µA
100
nA
0.5
mA
30
30
150
15
30
0.3
0.6
V
1.0
1.5
3.0
100
pF
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone [phone] Fax [phone] Email: [e-mail]
Website: http://www.semelab-tt.com
Document Number 8368
Issue 1
Page 2 of 3