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| 2N3904CSM Datasheet, PDF (2/2 Pages) Seme LAB – GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | |||
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SEME
LAB
2N3904CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)CEO*
V(BR)CBO
V(BR)EBO
ICEX
VCE(sat)
VBE(sat)*
Collector â Emitter Breakdown Voltage IC = 1mA
Collector â Base Breakdown Voltage IC = 10µA
Emitter â Base Breakdown Voltage IE = 10µA
Collector â Emitter Cut-off Current
VCE = 30V
Collector â Emitter Saturation Voltage IC = 10mA
IC = 50mA
Base â Emitter Saturation Voltage
IC = 10mA
IC = 50mA
hFE*
DC Current Gain
VCE = 1V
IB = 0
IE = 0
IC = 0
VEB = 3V
IB = 1mA
IB = 5mA
IB = 1mA
IB = 5mA
IC = 0.1mA
IC = 1mA
IC = 10mA
IC = 50mA
IC = 100mA
* Pulse Test: tp ⤠300µs, δ ⤠2%.
Min.
40
60
6
0.65
40
70
100
60
30
Typ.
Max. Unit
V
50
nA
0.2
V
0.3
0.85
V
0.95
300 â
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
ft
Current Gain Bandwidth Product
VCE = 20V IC = 10mA
f = 100MHz
Cob
Output Capacitance
VCB = 5V
f = 1MHz
IE = 0
Cib
Input Capacitance
VBE = 0.5V
f = 1MHz
IC = 0
hie
Input Impedance
hoe
Output Admittance
hre
Voltage Feedback Ratio
hfe
Small Signal Current Gain
NF
Noise Figure
VCE = 10V
IC = 1mA
f = 1kHz
VCE = 5V
f = 1kHz
IC = 100µA
RS = 1kâ¦
Min.
300
1
1
0.5
100
Typ.
Max. Unit
MHz
4
pF
8
pF
10
kâ¦
40 µhmos
8
x 10-4
400 â
5
dB
SWITCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
td
Delay Time
VCC = 3V
VBE = 0.5V
tr
Rise Time
IC = 10mA IB1 = 1mA
ts
Storage Time
VCC = 3V
VBE = 0.5V
tf
Fall Time
IB1 = IB2 = 1mA
Min.
Typ.
Max.
35
35
200
50
Unit
ns
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/95
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