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| 2N3904 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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SEME
LAB
2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)CEO*
V(BR)CBO
V(BR)EBO
Collector â Emitter Breakdown Voltage IC = 1mA
m Collector â Base Breakdown Voltage IC = 10 A
Emitter â Base Breakdown Voltage
IE = 10mA
IB = 0
IE = 0
IC = 0
IBL
Base Cut-off Current
VCE = 30V
ICEX
Collector â Emitter Cut-off Current
VEB = 3V
VCE(sat)
Collector â Emitter Saturation Voltage IC = 10mA
IC = 50mA
IB = 1mA
IB = 5mA
VBE(sat)* Base â Emitter Saturation Voltage
IC = 10mA
IC = 50mA
IB = 1mA
IB = 5mA
IC = 0.1mA
IC = 1mA
hFE*
DC Current Gain
VCE = 1V
IC = 10mA
IC = 50mA
* Pulse Test: tp £ 300ms, d £ 2%.
IC = 100mA
Min.
40
60
6
0.65
40
70
100
60
30
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
ft
Current Gain Bandwidth Product
VCE = 20V IC = 10mA
f = 100MHz
Cob
Output Capacitance
VCB = 5V
f = 1MHz
IE = 0
Cib
Input Capacitance
VBE = 0.5V
f = 1MHz
IC = 0
hie
Input Impedance
hoe
Output Admittance
hre
Voltage Feedback Ratio
hfe
Small Signal Current Gain
NF
Noise Figure
VCE = 10V
IC = 1mA
f = 1kHz
VCE = 5V
f = 1kHz
IC = 100mA
RS = 1kW
Min.
300
1
1
0.5
100
SWITCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
td
Delay Time
VCC = 3V
VBE = 0.5V
tr
Rise Time
IC = 10mA IB1 = 1mA
ts
Storage Time
VCC = 3V
VBE = 0.5V
tf
Fall Time
IB1 = IB2 = 1mA
Min.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Typ.
Typ.
Typ.
Max. Unit
V
50
nA
50
0.2
V
0.3
0.85
V
0.95
300 â
Max. Unit
MHz
4
pF
8
pF
10 kW
40 mhmos
8
x 10-4
400 â
5
dB
Max.
35
35
200
50
Unit
ns
Prelim. 7/00
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