2N3799X Datasheet, PDF (2/2 Pages) Seme LAB – PNP, LOW NOISE AMPLIFIER TRANSISTOR

SEME
LAB
2N3799X
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise stated)
Parameter
Test Conditions
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
Collector – Emitter Breakdown Voltage I_C = –10mA
m Collector – Base Breakdown Voltage I_C = –10 A
Emitter – Base Breakdown Voltage
I_E = –10mA
I_B = 0
I_E = 0
I_C = 0
I_CBO
Collector Cut-off Current
V_CB = –50V
I_E = 0
T_A = 150°C
I_EBO
V_CE(sat)
V_BE(sat)
V_BE(on)
h_FE
Emitter Cut-off Current
V_EB = –4V
m _{Collector – Emitter Saturation Voltage} I_C = –100 A
I_C = –1mA
Base – Emitter Saturation Voltage
I_C = –100mA
I_C = –1mA
Base – Emitter On Voltage
I_C = –100mA
I_C = –1mA
I_C = –10mA
I_C = –100mA
DC Current Gain
m (V_CE = –5V) I_C = –100 A
I_C = –500mA
I_C = 0
I_B = –10mA
I_B = –100mA
I_B = –10mA
I_B = –100mA
V_CE = –5V
T_A = –55°C
I_C = –1mA
* Pulse Test: t_p £ 300ms, d £ 2%.
I_C = –10mA *
Min.
–60
–50
–5
75
225
300
150
300
300
250
SMALL SIGNAL CHARACTERISTICS (T_A = 25°C unless otherwise stated)
Parameter
Test Conditions
f_t
m Current Gain Bandwidth V_CE = –5V I_C = –500 A f = 20MHz
Product ¹
V_CE = –5V I_C = –1mA f = 100MHz
C_ob Output Capacitance
V_CB = –5V I_E = 0
f = 1MHz
C_ib
Input Capacitance
V_EB = –0.5V I_C = 0
f = 1MHz
h_ie
h_oe
h_re
Input Impedance
Output Admittance
Voltage Feedback Ratio
V_CE = –10V
I_C = –1mA
f = 1kHz
h_fe
Small Signal Current Gain
f = 100Hz B.W. = 20Hz
N_F
Noise Figure
V_CE = –10V
I_C = –100mA
R_G = 3kW
Spot:
Noise:
f = 1kHz
B.W. = 200Hz
f = 10kHz
B.W. = 2kHz
f = 1kHz
Min.
30
100
10
5
300
1) f_t is defined as the frequency at which |h_fe| extrapolates to untity.
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Typ.
Typ.
2.5
0.8
1.8
1.5
Max. Unit
V
–0.01 _mA
–10
–20 nA
–0.2
V
–0.25
–0.7
V
–0.8
–0.7 V
—
Max. Unit
MHz
500
4
pF
8
40 kW
60 mhmos
25 x 10^-4
900 —
4
1.5
dB
1.5
2.5
Prelim. 7/96