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2N3767SMD05 Datasheet, PDF (2/2 Pages) Seme LAB – NPN BIPOLAR TRANSISTOR
2N3767SMD05
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)CEO
ICEX
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage1
Collector Cutoff Current
IC = 100mA
VCE = 100V
VCE = 70V
IEBO
ICEO
ICBO
Emitter Base Cutoff Current
Collector Emitter Cutoff Current
Collector Base Cutoff Current
ON CHARACTERISTICS
VEB = 6V
VCE = 80V
VCB = 100V
IB = 0
VBE = 1.5V
VBE = 1.5V
TA = 150°C
IC = 0
IB = 0
IE = 0
hFE
VCE(sat)
VBE
IC = 50mA
DC Current Gain
IC = 500mA
IC = 1.0A
Collector Emitter Saturation Voltage IC = 1.0A
Base Emitter Voltage
IC = 1.0A
TRANSIENT CHARACTERISTICS
VCE = 5V
VCE = 5V
VCE = 10V
IB = 0.1A
VCE = 10V
fT
Transistion Frequency
VCE = 10V
IC = 500mA
f = 10MHz
COB
Common Base Output Capacitance VCB = 10V IC = 0A
f = 100KHz
hfe
Small Signal Current Gain
VCE = 10V
IC = 100mA
f = 1.0kHz
Min. Typ. Max. Unit
80
V
100 µA
1.0
0.75 mA
0.7
0.1
30
40
160 —
20
2.5
V
1.5
10 MHz
50
pF
40
—
1) Pulse test : Pulse Width < 100µs ,Duty Cycle <1%
2) ft is defined as the frequency at which |hfe| extrapolates to untity.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 3781
Issue 3