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2N3741SMD Datasheet, PDF (2/2 Pages) Seme LAB – MEDIUM POWER PNP SILICON POWER TRANSISTOR
◁
SEME
LAB
2N3741SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
ELECTRICAL CHARACTERISTICS
VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 100mA IB = 0
80
ICBO
Collector Base Cut–Off Current
VCB = 80V IE = 0
ICEO
Collector Emiiter Cut–Off Current
VCE = 60V IB = 0
VCE = 80V VBE(OFF) = 1.5V
ICEX
Collector Cut–Off Current
VCE = 60V VBE(OFF) = 1.5V
TC = 150°C
IEBO
Emitter Base Cut–Off Current
VEB = 7V
IC = 100mA VCE = 1V
40
hFE*
DC Current Gain
IC = 250mA VCE = 1V
30
IC = 500mA VCE = 1V
20
IC = 1A
VCE = 1V
10
VCE(sat)* Collector – Emitter Saturation Voltage IC = 1A
IB = 125mA
VBE*
Base – Emitter Saturation Voltage IC = 250mA IB = 1V
DYNAMIC CHARACTERISTICS
ft
Transition Frequency
IC = 100mA VCE = 10V
3
f = 1MHz
4
Cob
Output Capacitance
VCB = 10V IC = 0
f = 100KHz
hfe
Small Signal Current Gain
IC = 50mA VCE = 10V
25
f = 1KHz
Typ.
Max. Unit
V
100 µA
1.0 mA
100 µA
1
mA
0.5 mA
100
—
0.6
V
1.0
MHz
100 pF
—
* Pulse Width ≤ 300µs , Duty Cycle < 2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
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Document Number 2659
Issue 1