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| 2N2484CSM Datasheet, PDF (2/2 Pages) Seme LAB – HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | |||
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SEME
LAB
2N2484CSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
V(BR)CBO* Collector â Base Breakdown Voltage IC = 10µA
IE = 0
60
V(BR)CEO Collector â Emitter Breakdown Voltage IC = 10mA IB = 0
60
V(BR)EBO Emitter â Base Breakdown Voltage
IE = 10µA
IC = 0
6
ICBO
Collector Cut-off Current
VCB = 45V IE = 0
IEBO
Emitter Cut-off Current
VBE = 5V
IC = 0
VCE(sat) Collector â Emitter Saturation Voltage IC = 1mA
IB = 0.1mA
VBE(on) Base â Emitter On Voltage
IC = 0.1mA VCE = 5V
0.5
IC = 1µA
VCE = 5V
30
IC = 10µA
VCE = 5V
100
hFE
DC Current Gain
IC = 100µA VCE = 5V
175
IC = 500µA VCE = 5V
200
IC = 1mA
VCE = 5V
250
IC = 10mA VCE = 5V
fT
Current Gain Bandwidth Product
f = 5MHz
IC = 0.05mA
15
f = 30MHz IC = 0.5mA
60
Cob
Output Capacitance
VCB = 5V
f = 140kHz
IE = 0
Cib
Input Capacitance
VBE = 0.5V
f = 140kHz
IC = 0
hie
Input Impedance
VCE = 5V
3.5
hre
Voltage Feedback Ratio
IC = 1mA
hfe
Small Signal Current Gain
f = 1kHz
150
* Pulse Test: tp ⤠300µs, δ ⤠2%.
Typ.
Max. Unit
V
10
nA
10
0.35
V
0.7
500
â
800
MHz
6
pF
6
pF
24
kâ¦
800 x 10-6
900 â
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
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