2N2222AC1 Datasheet, PDF (2/4 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN TRANSISTOR

SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO⁽¹⁾
Collector-Emitter
Breakdown Voltage
IC = 10mA
VCB = 75V
IB = 0
IE = 0
ICBO
Collector Cut-Off Current
VCB = 60V
IE = 0
TA = 150°C
IEBO
Emitter Cut-Off Current
VEB = 6V
VEB = 4V
IC = 0
IC = 0
ICES
Collector Cut-Off Current
VCE = 50V
VCE(sat)⁽¹⁾
Collector-Emitter Saturation
Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
VBE(sat)⁽¹⁾
Base-Emitter Saturation
Voltage
IC = 150mA
IC = 500mA
IB = 15mA
IB = 50mA
IC = 0.1mA
VCE = 10V
IC = 1.0mA
VCE = 10V
hFE⁽¹⁾
Forward-current transfer
ratio
IC = 10mA
VCE = 10V
TA = -55°C
IC = 150mA
VCE = 10V
IC = 500mA
VCE = 10V
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
hfe
Small Signal Current Gain
Cobo
Output Capacitance
Cibo
Input Capacitance
ton
Turn-On Time
toff
Turn-Off Time
IC = 20mA
VCE = 20V
f = 100MHz
IC = 1.0mA
VCE = 10V
f = 1.0KHz
VCB = 10V
IE = 0
f = 1.0MHz
VEB = 0.5V
IC = 0
f = 1.0MHz
IC = 150mA
IB1 = 15mA
VCC = 30V
IC = 150mA
VCC = 30V
IB1 = - IB2 = 15mA
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Min.
50
0.6
50
75
100
35
100
30
Typ
Max. Units
V
10
µA
10
nA
10
µA
10
µA
10
nA
50
nA
0.3
1.0
V
1.2
2
325
300
2.5
50
8
pF
30
35
ns
300
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Document Number 8359
Issue 2
Page 2 of 4