English
Language : 

2N2060A Datasheet, PDF (2/2 Pages) Seme LAB – DUAL AMPLIFIER TRANSISTOR
◁
SEME
LAB
2N2060A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
OFF CHARACTERISTICS
VCER(sus)* Collector – Emitter Breakdown Voltage IC = 100mA RBE £ 10W
80
VCEO(sus)* Collector – Emitter Sustaining Voltage IC = 30mA IB = 0
60
V(BR)CBO Collector – Base Breakdown Voltage IC = 100mA IE = 0
100
V(BR)EBO Emitter – Base Breakdown Voltage
IE = 100mA IC = 0
7
ICBO
Collector Cut-off Current
VCB = 80V
IE = 0
TA = 150°C
IEBO
Emitter Cut-off Current
VBE = 5V
IC = 0
ON CHARACTERISTICS
IC = 10mA
VCE = 5V
25
hFE
DC Current Gain
IC = 100mA VCE = 5V
30
IC = 1mA
VCE = 5V
40
IC = 10mA VCE = 5V
50
VCE(sat) Collector – Emitter Saturation Voltage IC = 50mA IB = 5mA
VBE(sat) Base – Emitter Saturation Voltage
IC = 50mA IB = 5mA
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain Bandwidth Product
IC = 50mA VCE = 10V
60
f = 20MHz
Cob
Output Capacitance
IE = 0
f = 1MHz
VCB = 10V
Cib
Input Capacitance
IC = 0
f = 1MHz
VBE = 0.5V
hie
Input Impedance
IC = 1mA
f = 1kHz
VCE = 5V
1000
hib
Input Impedance
IC = 1mA
VCB = 10V
20
f = 1kHz
hfe
Small Signal Current Gain
hoe
Output Admittance
IC = 1mA
VCE = 5V
50
f = 1kHz
MATCHING CHARACTERISTICS
hFE1/hFE2
DC Current Gain Ratio 1
IC = 100mA VCE = 5V
0.9
IC = 1mA
VCE = 5V
0.9
½VBE1-VBE2½ Base – Emitter Voltage Differential
IC = 100mA
IC = 1mA
VCE = 5V
VCE = 5V
D(VBE1-VBE2) Base – Emitter Voltage Differential IC = 100mA VCE = 5V
DT
Change Due To Temperature
TA = –55 to +125°C
* Pulse Test: tp £ 300ms, d £ 2%.
1) The lowest hFE reading is taken as hFE1 for this ratio.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Typ.
Max. Unit
V
V
V
V
0.002
mA
10
2.0
nA
75
90
—
120
150
0.6
V
0.9
MHz
15
pF
85
pF
4000 W
30
W
150 —
16 mmhos
1.0
—
1.0
3.0
mV
5.0
5.0 mV/°C
Prelim. 4/96