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ZVP2106B Datasheet, PDF (1/2 Pages) Seme LAB – P CHANNEL ENHANCEMENT MODE DMOS FET
ZVP2106B
MECHANICAL DATA
Dimensions in mm (inches)
P CHANNEL ENHANCEMENT
MODE DMOS FET
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
typ.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
1
3
45°
Pin 1 – Source
TO39
Pin 2 – Gate
BVDSS
ID(cont)
RDS(on)
- 60V
0.76A
0.5Ω
2.54
(0.100)
Pin 3 – Drain
FEATURES
• FAST SWITCHING SPEEDS
• NO SECONDARY BREAKDOWN
• EXCELLENT TEMPERATURE STABILITY
• HIGH INPUT IMPEDANCE
• LOW CURRENT DRIVE
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
VDS
Drain – Source Voltage
ID
Continuous Drain Current (VGS = 10V , Tcase = 25°C)
ID
Continuous Drain Current (VGS = 10V , Tcase = 100°C)
IDM
Pulsed Drain Current
PD
Power Dissipation @ TA = 25°C
PD
Power Dissipation @ TC = 25°C
TJ , Tstg
Operating and Storage Temperature Range
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
±20
-60V
0.28A
-0.76A
-4A
0.7W
5W
–55 to 150°C
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