VP1008CSM4_10 Datasheet, PDF (1/3 Pages) Seme LAB – P-CHANNEL ENHANCEMENT MODE MOSFET

P-CHANNEL ENHANCEMENT
MODE MOSFET
VP1008CSM4
• Low On-Resistance, RDS(on)
• Moderate Threshold, VGS(th)
• Low Input Capacitance, CISS
• Fast Switching Speed
• Hermetic Ceramic Surface Mount Package
• Ideally Suited For Power Supply Circuits, Switching And
Driver (Relay, Solenoid, Lamp etc.) Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
100V
VGS
Gate – Source Voltage
±30V
ID
Continuous Drain Current
TA = 25°C
300mA
TA = 100°C
195mA
IDM
Pulsed Drain Current ⁽¹⁾
3A
PD
Total Power Dissipation at
TA = 25°C
400mW
Derate Above 25°C
3.2mW/°C
TJ
Operating Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
R_θJA
Thermal Resistance, Junction To Ambient
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
Min. Typ. Max. Units
312.5 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
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Document Number 8447
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