VP1008CSM4 Datasheet, PDF (1/2 Pages) Seme LAB – P-CHANNEL ENHANCEMENT MODE MOSFET

VP1008CSM4
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL
ENHANCEMENT MODE
MOSFET
5.59 ± 0.13
(0.22 ± 0.005)
3
2
4
1
1.40 ± 0.15
(0.055 ± 0.006)
0.25 ± 0.03
(0.01 ± 0.001)
0.23
(0.009)
rad.
0.23
(0.009)
min.
1.02 ± 0.20
(0.04 ± 0.008)
2.03 ± 0.20
(0.08 ± 0.008)
FEATURES
• B_VDSS =100V
• I_D = 300mA
• Hermetic Surface Mount Package
• Screening Option Available
LCC3 PACKAGE
Underside View
PAD 1 - Drain
PAD 2 - N/C
PAD 3 - Source
PAD 4 - Gate
The VP1008CSM4 is a general purpose
P-Channel enhancement mode mosfet in
a Ceramic Surface Mount package
designed for high rel applications:
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C unless otherwise stated)
V_DS
Drain – Source Voltage
V_GS
Gate – Source Voltage
I_D
Continuous Drain Current
@T_A = 25°C
I_DM
Pulsed Drain Current ¹
@T_A = 100°C
P_D
Power Dissipation
@T_A = 25°C
@T_A = 100°C
T_STG , T_J Maximum Junction and Storage Temperature Range
100V
"30V
300mA
195mA
3A
400W
160W
150°C
NOTE:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 9/99