VN10K-TO18 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE MOSFET

VN10K-TO18
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
N–CHANNEL
ENHANCEMENT MODE
MOSFET
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
D
G
S
31
2
TO18 PACKAGE
Underside View
PIN 1 - Source
PIN 2 - Gate
PIN 3 - Drain & Case
ABSOLUTE MAXIMUM RATINGS (T_amb = 25°C unless otherwise stated)
V_DS
Drain – Source Voltage
60V
V_GS
Gate – Source Voltage
+15 , –0.3 V
I_D
Continuous Drain Current
@T_amb = 25°C
0.17A
@T_amb = 100°C
I_DM
Pulsed Drain Current ¹
0.11A
1.0A
P_D
Power Dissipation
@T_amb = 25°C
1.5W
@T_amb = 100°C
0.12W
T_STG , T_J
Maximum Junction and Storage Temperature Range
–55 to 150°C
NOTE:
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
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Prelim.10/99