SMLBFY90 Datasheet, PDF (1/2 Pages) Seme LAB – SILICON PLANAR EPITAXIAL NPN TRANSISTOR

SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
SMLBFY90
• LOW NOISE TRANSISTOR
• FOR USE IN BROAD AND NARROW-BAND
AMPLIFIERS UP TO 1GHz
Semelab Limited
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
V_CBO Collector - Base Voltage
V_CER Collector - Emitter Voltage (R_BE ≤ 50Ω)
V_CEO Collector - Emitter Voltage
V_EBO Emitter - Base Voltage
I_C(AV) Average Collector Current
I_CM Peak Collector Current (f ≥ 1MHz)
P_tot Power Dissipation at T_A = 25°C
T_stg Storage Temperature
T_j
Junction Temperature
30V
30V
15V
2.5V
25mA
50mA
200mW
200°C
-65 to +200°C
THERMAL PROPERTIES
Parameters
R_{θJA Junction - ambient thermal resistance}
R_{θJC Junction - case thermal resistance}
* Pulse Test t_p = 300μs, δ ≤ 2%
(1) Shield Lead (case) not connected
Min.
Typ.
Max. Unit
≤ 880 °C/W
≤ 580 °C/W
(2) Shield Lead (case) grounded
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
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Document Number 7861
Issue 2