SML9030T254 Datasheet, PDF (1/2 Pages) Seme LAB – P-CHANNEL MOS TRANSISTOR

SML9030–T254
MECHANICAL DATA
Dimensions in mm (inches)
3.53 (0.139)
3.78 (0.149)
Dia.
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
P–CHANNEL
MOS
TRANSISTOR
V_DSS
I_D(cont)
R_DS(on)
–50V
–18A
0.14W
123
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
TO–254 – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
FEATURES
• P CHANNEL
• REPETITIVE AVALANCHE RATED
• DYNAMIC dv/dt RATING
• FAST SWITCHING
• EASE OF PARALLELING
• SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_GS
Gate – Source Voltage
±20V
I_D
Continuous Drain Current
(V_GS = -10V , T_case = 25°C)
-18A
I_D
Continuous Drain Current
(V_GS = -10V , T_case = 100°C)
I_DM
Pulsed Drain Current ¹
-13A
-72A
P_D
Power Dissipation @ T_case = 25°C
Linear Derating Factor
88W
0.59W/°C
E_AS
I_AR
E_AR
dv/dt
Single Pulse Avalanche Energy ²
Avalanche Current ¹
Repetitive Avalanche Energy ¹
Peak Diode Recovery ³
370mJ
-18A
8.8mJ
-4.5V/ns
T_J
T_STG
R_qJC
R_qJA
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
–55 to +175°C
–55 to +200°C
0.6°C/W
48°C/W
Notes
1) Repetitive Rating: Pulse width limited by maximum junction temperature.
2) @ V_DD = -25V , L = 1.3mH , R_G = 25W , I_AS = -18A , Starting T_J = 25°C.
3) @ I_SD £ -18A , di/dt £ 170A/ms , V_DD £ BV_DSS , T_J £ 175°C.
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
Prelim. 1/95