SML60A18 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML60A18
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Pin 1 – Gate
Pin 2 – Source
Case – Drain
V_DSS
I_D(cont)
R_DS(on)
600V
17.5A
0.320Ω
• Faster Switching
• Lower Leakage
• TO–3 Hermetic Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
V_GSM
Gate – Source Voltage Transient
P_D
Total Power Dissipation @ T_case = 25°C
Derate Linearly
T_J , T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ²
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T_J = 25°C, L = 8.49mH, R_G = 25Ω, Peak I_L = 17.5A
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
600
17.5
70
±30
±40
235
1.88
–55 to 150
300
17.5
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
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