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SML50T47 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |||
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SML50T47
T247clipPackage Outline.
Dimensions in mm (inches)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
NâCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
2
0.40 (0.016)
0.79 (0.031)
123
1.01 (0.040)
1.40 (0.055)
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
2.13 (0.084)
VDSS
ID(cont)
RDS(on)
500V
47A
0.100W
2.21 (0.087)
2.59 (0.102)
Pin 1 â Gate
Pin 2 â Drain
D
5.45 (0.215)
BSC
2plcs
Pin 3 â Source
⢠Faster Switching
⢠Lower Leakage
⢠100% Avalanche Tested
⢠New T247clip Package
(Clipâmounted TOâ247 Package)
G
S
StarMOS is a new generation of high voltage
NâChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain â Source Voltage
500
V
ID
Continuous Drain Current
IDM
Pulsed Drain Current 1
47
A
188
A
VGS
VGSM
Gate â Source Voltage
Gate â Source Voltage Transient
±30
V
±40
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
520
W
4.16
W/°C
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063â from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
â55 to 150
°C
300
47
A
50
mJ
2500
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
W 2) Starting TJ = 25°C, L = 2.26mH, RG = 25 , Peak IL = 47A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
6/99
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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