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SML50H24 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |||
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SML50H24
TOâ258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695)
17.39 (0.685)
6.86 (0.270)
6.09 (0.240)
1.14 (0.707)
0.88 (0.035)
123
4.19 (0.165)
3.94 (0.155)
Dia.
Pin 1 â Drain
5.08 (0.200)
BSC
1.65 (0.065)
1.39 (0.055)
Typ.
Pin 2 â Source
3.56 (0.140)
BSC
Pin 3 â Gate
NâCHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
VDSS
ID(cont)
RDS(on)
500V
24A
0.190â¦
⢠Faster Switching
⢠Lower Leakage
⢠TOâ258 Hermetic Package
D
G
S
StarMOS is a new generation of high voltage
NâChannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain â Source Voltage
ID
Continuous Drain Current
IDM
Pulsed Drain Current 1
VGS
Gate â Source Voltage
VGSM
Gate â Source Voltage Transient
PD
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
TJ , TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063â from Case for 10 Sec.
Avalanche Current1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 4.51mH, RG = 25â¦, Peak IL = 24A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
500
24
96
±30
±40
250
2.0
â55 to 150
300
24
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
6/99
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