SML50H19 Datasheet, PDF (1/2 Pages) Seme LAB – N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML50H19
TO–258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695)
17.39 (0.685)
6.86 (0.270)
6.09 (0.240)
1.14 (0.707)
0.88 (0.035)
123
4.19 (0.165)
3.94 (0.155)
Dia.
Pin 1 – Drain
5.08 (0.200)
BSC
1.65 (0.065)
1.39 (0.055)
Typ.
Pin 2 – Source
3.56 (0.140)
BSC
Pin 3 – Gate
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
V_DSS
I_D(cont)
R_DS(on)
500V
18.5A
0.260Ω
• Faster Switching
• Lower Leakage
• TO–258 Hermetic Package
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C unless otherwise stated)
V_DSS
Drain – Source Voltage
I_D
Continuous Drain Current
I_DM
Pulsed Drain Current ¹
V_GS
Gate – Source Voltage
V_GSM
Gate – Source Voltage Transient
P_D
Total Power Dissipation @ T_case = 25°C
Derate Linearly
T_J , T_STG
T_L
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current¹ (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy ¹
Single Pulse Avalanche Energy ²
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T_J = 25°C, L = 7.07mH, R_G = 25Ω, Peak I_L = 18.5A
Semelab plc. Telephone [phone]. Fax [phone].
E-mail: [e-mail] Website: http://www.semelab.co.uk
500
18.5
74
±30
±40
200
1.6
–55 to 150
300
18.5
30
1210
V
A
A
V
W
W/°C
°C
A
mJ
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